Title :
An intelligent analysis of Iddq data for chip classification in very deep-submicron (VDSM) CMOS technology
Author :
Chang, Chia-Ling ; Chang, Chia-Ching ; Chan, Hui-Ling ; Wen, Charles H -P ; Bhadra, Jayanta
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
Jan. 30 2012-Feb. 2 2012
Abstract :
Iddq testing has been a critical integral component in test suites for screening unreliable devices. As the silicon technology keeps shrinking, Iddq values and their variation increase as well. Moreover, along with rapid design scaling, defect-induced leakage currents become less significant when compared to full-chip current and also make themselves less distinguishable. Traditional Iddq methods become less effective and cause more test escapes and yield loss. Therefore, in this paper, a new test method named σ-Iddq testing is proposed and integrates (1) a variation-aware full-chip leakage estimator and (2) a clustering algorithm to classify chip without using threshold values. Experimental result shows that σ-Iddq testing achieves a higher classification accuracy in a 45 nm technology when compared to a single-threshold Iddq testing. As a result, both the process-variation and design-scaling impacts are successfully excluded and thus the defective chips can be identified intelligently.
Keywords :
CMOS integrated circuits; data analysis; integrated circuit design; integrated circuit testing; leakage currents; Iddq data intelligent analysis; chip classification; clustering algorithm; defect-induced leakage currents; design-scaling impacts; process-variation; silicon technology; single-threshold σ-Iddq testing method; size 45 nm; variation-aware full-chip leakage estimator; very deep-submicron CMOS technology; Accuracy; Circuit faults; Classification algorithms; Clustering algorithms; Leakage current; Semiconductor device measurement; Testing;
Conference_Titel :
Design Automation Conference (ASP-DAC), 2012 17th Asia and South Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4673-0770-3
DOI :
10.1109/ASPDAC.2012.6164938