Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar

Author

John, Jay P. ; Kirchgessner, Jim ; Menner, Matt ; Rueda, Hernan ; Chai, Francis ; Morgan, Dave ; Hildreth, Jill ; Dawdy, Morgan ; Reuter, Ralf ; Li, Hao

Author_Institution

Microwave & Mixed Signal Technol. Lab., Freescale Semicond., Tempe, AZ

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

The development of a selective-epi, SiGe:C HBT module for 77GHz automotive radar applications is described. A cutoff frequency (f_T) of 185GHz, in conjunction with a maximum oscillation frequency of 260GHz has been achieved through the implementation of a self-aligned selective-epi base structure and a simple, cost-effective collector construction without buried layer or deep trench isolation

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; millimetre wave integrated circuits; road vehicle radar; 77 GHz; BiCMOS process technology; HBT module; SiGe:C; automotive radar; bipolar transistors; millimeter wave technology; self-aligned selective-epi base structure; Automotive engineering; BiCMOS integrated circuits; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Microwave technology; Millimeter wave technology; Radar applications; Silicon germanium; Bipolar transistors; Millimeter wave technology; SiGe; SiGe:C; Silicon bipolar/BiCMOS process technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311149

Filename

4100217