DocumentCode :
3498775
Title :
Demonstration of three-dimensional 35nF/mm2 MIM Capacitor integrated in BiCMOS Circuits
Author :
Giraudin, JC ; Badets, F. ; Blanc, JP ; Chataigner, E. ; Bajolet, A. ; Jagueneau, T. ; Rossato, C. ; Delpech, P.
Author_Institution :
STMicroelectronics, Crolles
fYear :
2006
fDate :
8-10 Oct. 2006
Firstpage :
1
Lastpage :
4
Abstract :
This paper summarizes the electrical characterization of MIM capacitor realized in three-dimensional. High density of 35nF/mm2 is obtained with low leakage current. Its integration in BiCMOS technology is demonstrated and three circuits are characterized
Keywords :
BiCMOS integrated circuits; MIM devices; capacitors; filters; frequency synthesizers; voltage-controlled oscillators; BiCMOS circuit; MIM devices; filters; frequency synthesizers; low leakage current; three-dimensional MIM capacitor; voltage controlled oscillators; BiCMOS integrated circuits; Capacitance; Dielectric materials; Dielectrics and electrical insulation; Electrodes; Integrated circuit technology; Leakage current; MIM capacitors; Mobile handsets; Scanning electron microscopy; BiCMOS integrated circuits; Capacitors; Filters; Frequency synthesizers; MIM devices; Voltage controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
ISSN :
1088-9299
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2006.311152
Filename :
4100220
Link To Document :
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