• DocumentCode
    3498775
  • Title

    Demonstration of three-dimensional 35nF/mm2 MIM Capacitor integrated in BiCMOS Circuits

  • Author

    Giraudin, JC ; Badets, F. ; Blanc, JP ; Chataigner, E. ; Bajolet, A. ; Jagueneau, T. ; Rossato, C. ; Delpech, P.

  • Author_Institution
    STMicroelectronics, Crolles
  • fYear
    2006
  • fDate
    8-10 Oct. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper summarizes the electrical characterization of MIM capacitor realized in three-dimensional. High density of 35nF/mm2 is obtained with low leakage current. Its integration in BiCMOS technology is demonstrated and three circuits are characterized
  • Keywords
    BiCMOS integrated circuits; MIM devices; capacitors; filters; frequency synthesizers; voltage-controlled oscillators; BiCMOS circuit; MIM devices; filters; frequency synthesizers; low leakage current; three-dimensional MIM capacitor; voltage controlled oscillators; BiCMOS integrated circuits; Capacitance; Dielectric materials; Dielectrics and electrical insulation; Electrodes; Integrated circuit technology; Leakage current; MIM capacitors; Mobile handsets; Scanning electron microscopy; BiCMOS integrated circuits; Capacitors; Filters; Frequency synthesizers; MIM devices; Voltage controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2006
  • Conference_Location
    Maastricht
  • ISSN
    1088-9299
  • Print_ISBN
    1-4244-0458-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2006.311152
  • Filename
    4100220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3498775