Title :
High-power 0.8 /spl mu/m-band broad-area laser diodes with a decoupled confinement heterostructure
Author :
Oeda, Y. ; Fujimoto, Takafumi ; Yamada, Y. ; Yamada, Y. ; Shibuya, Hitoshi ; Muro, Keiji
Author_Institution :
Electron. & Inf. Mater. Lab., Mitsui Chem. Inc., Chiba, Japan
Abstract :
Summary form only given. The authors demonstrated high-power cw operation and long lifetimes of 0.8-/spl mu/m-band GaAs-AlGaAs DCH laser diodes.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; laser transitions; life testing; optical testing; semiconductor device testing; semiconductor lasers; 0.8 mum; 0.8-/spl mu/m-band GaAs-AlGaAs DCH laser diodes; GaAs-AlGaAs; decoupled confinement heterostructure; high-power 0.8 /spl mu/m-band broad-area laser diodes; high-power cw operation; long lifetime; Apertures; Brightness; Coatings; Diode lasers; Laser beams; Molecular beam epitaxial growth; Optical waveguides; Power generation; Testing; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675793
