Fluorinated CMOSFETs fabricated on (100) and (111) Si substrates

Author

Balasinski, A. ; Vishnubhotla, L. ; Ma, T.P. ; Tseng, H.-H. ; Tobin, P.J.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

1993

fDate

1993

Firstpage

95

Lastpage

99

Abstract

By introducing appropriate amounts of F into the gate SiO₂, the transconductance and channel mobility for both n- and p-channel MOSFETs made on either (100) or (111) Si substrate are improved, due to the reduced densities of interface traps and oxide charge. These results, coupled with its improved reliability against hot-carrier damage, make fluorinated oxide an attractive VLSI technology.

Keywords

CMOS integrated circuits; VLSI; carrier mobility; insulated gate field effect transistors; interface electron states; ion implantation; (100) substrate; (111) substrate; CMOSFET; LDD; Si substrates; SiO₂:F; VLSI; channel mobility; effective mass effect; fluorinated oxide; gate SiO₂; ion implantation; n-channel; p-channel; reduced densities of interface traps; reduced oxide charge; reliability against hot-carrier damage; transconductance; CMOSFETs; Charge measurement; Charge pumps; Current measurement; Effective mass; Hot carriers; MOSFET circuits; Microelectronics; Research and development; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263635

Filename

263635