Non-quasi-static effects in saturated bipolar circuits

Author

Wu, B.S. ; Chuang, C.T. ; Lu, P.F.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1993

fDate

1993

Firstpage

117

Lastpage

120

Abstract

A non-quasi-static (NQS) model accounting for intrinsic carrier propagation delays in both B/E and B/C junctions is implemented in the ASTAP circuit simulator to evaluate the impact of non-quasi-static effects in saturated bipolar circuits. It is shown that while the extra delay introduced by the NQS effects during the turn-on transition is primarily due to the normal mode B/E NQS time constant, the more severe NQS delay in the turn-off transition is caused mainly by the removal of the saturation over-drive charges and the longer inverse mode B/C NQS time constant.

Keywords

bipolar integrated circuits; circuit analysis computing; delays; ASTAP circuit simulator; intrinsic carrier propagation delays; inverse mode time constant; nonquasistatic effects; normal mode time constant; saturated bipolar circuits; saturated invertor; saturation over-drive charges; turn-off transition; turn-on transition; Analog circuits; Capacitance; Circuit simulation; Delay effects; Digital circuits; Inverters; Monitoring; Propagation delay; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263640

Filename

263640