Two-dimensional DC and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer circuit

Author

Kuo, J.B. ; Lu, T.C. ; Ma, S.Y.

Author_Institution

Dept. of Electr. Eng., National Taiwan Univ., Taipei, Taiwan

fYear

1993

fDate

1993

Firstpage

121

Lastpage

123

Abstract

The authors report DC and transient analysis of a SiGe-base heterojunction bipolar device in an ECL buffer circuit using a modified PISCES program. As confirmed by published data, the modified PISCES program provides a good prediction on the f_T for the SiGe-base heterojunction bipolar devices. Based on the PISCES results, the ECL buffer using the BJT devices with germanium only provides a less than 10% shorter fall time as compared to the case without it although the f_T is 2* faster.

Keywords

Ge-Si alloys; bipolar integrated circuits; buffer circuits; circuit analysis computing; emitter-coupled logic; heterojunction bipolar transistors; semiconductor device models; 2D DC analysis; BJT; ECL buffer circuit; SiGe base; heterojunction bipolar device; modified PISCES program; transient analysis; Analytical models; Circuit optimization; Circuit simulation; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Solid modeling; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263641

Filename

263641