DocumentCode :
3499053
Title :
Body bias clustering for low test-cost post-silicon tuning
Author :
Kimura, Shuta ; Hashimoto, Masanori ; Onoye, Takao
Author_Institution :
Dept. of Inf. Syst. Eng., Osaka Univ., Suita, Japan
fYear :
2012
fDate :
Jan. 30 2012-Feb. 2 2012
Firstpage :
283
Lastpage :
289
Abstract :
Post-silicon tuning is attracting a lot of attention for coping with increasing process variation. However, its tuning cost via testing is still a crucial problem. In this paper, we propose tuning-friendly body bias clustering with multiple bias voltages. The proposed method provides a small set of compensation levels so that the speed and leakage current vary monotonically according to the level. Thanks to this monotonic leveling and limitation of the number of levels, the test-cost of post-silicon tuning is significantly reduced. During the body bias clustering, the proposed method explicitly estimates and minimizes the average leakage after the post-silicon tuning. Experimental results demonstrate that the proposed method reduces the average leakage by 25.3 to 51.9% compared to non clustering case. We reveal that two bias voltages are sufficient when only a small number of compensation levels are allowed for test-cost reduction. We also give an implication on how to synthesize a circuit to which post-silicon tuning will be applied.
Keywords :
circuit testing; circuit tuning; elemental semiconductors; network synthesis; silicon; Si; bias voltages; compensation levels; leakage current; leakage reduction; monotonic leveling; process variation; test-cost post-silicon tuning; test-cost reduction; tuning-friendly body bias clustering; Delay; Leakage current; Simulated annealing; Testing; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (ASP-DAC), 2012 17th Asia and South Pacific
Conference_Location :
Sydney, NSW
ISSN :
2153-6961
Print_ISBN :
978-1-4673-0770-3
Type :
conf
DOI :
10.1109/ASPDAC.2012.6164959
Filename :
6164959
Link To Document :
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