DocumentCode
3499053
Title
Body bias clustering for low test-cost post-silicon tuning
Author
Kimura, Shuta ; Hashimoto, Masanori ; Onoye, Takao
Author_Institution
Dept. of Inf. Syst. Eng., Osaka Univ., Suita, Japan
fYear
2012
fDate
Jan. 30 2012-Feb. 2 2012
Firstpage
283
Lastpage
289
Abstract
Post-silicon tuning is attracting a lot of attention for coping with increasing process variation. However, its tuning cost via testing is still a crucial problem. In this paper, we propose tuning-friendly body bias clustering with multiple bias voltages. The proposed method provides a small set of compensation levels so that the speed and leakage current vary monotonically according to the level. Thanks to this monotonic leveling and limitation of the number of levels, the test-cost of post-silicon tuning is significantly reduced. During the body bias clustering, the proposed method explicitly estimates and minimizes the average leakage after the post-silicon tuning. Experimental results demonstrate that the proposed method reduces the average leakage by 25.3 to 51.9% compared to non clustering case. We reveal that two bias voltages are sufficient when only a small number of compensation levels are allowed for test-cost reduction. We also give an implication on how to synthesize a circuit to which post-silicon tuning will be applied.
Keywords
circuit testing; circuit tuning; elemental semiconductors; network synthesis; silicon; Si; bias voltages; compensation levels; leakage current; leakage reduction; monotonic leveling; process variation; test-cost post-silicon tuning; test-cost reduction; tuning-friendly body bias clustering; Delay; Leakage current; Simulated annealing; Testing; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (ASP-DAC), 2012 17th Asia and South Pacific
Conference_Location
Sydney, NSW
ISSN
2153-6961
Print_ISBN
978-1-4673-0770-3
Type
conf
DOI
10.1109/ASPDAC.2012.6164959
Filename
6164959
Link To Document