The fabrication and operating mechanism analysis of copper-phthalocyanine organic thin film transistor

Author

Pengfei Jia ; Dongxing Wang ; Hao Zhang ; Boming Wu ; Jinghua Yin ; Hong Zhao

Author_Institution

Dept. of Electron. Sci. & Technol., Harbin Univ. of Sci. & Technol., Harbin, China

Volume

01

fYear

2013

fDate

16-18 Aug. 2013

Firstpage

173

Lastpage

176

Abstract

In order to make the operating characteristics of OFET device better, we used CuPc to fabricate organic thin film transistor with five layers structure of Au/ CuPc / Al / CuPc /Au with vertical conductive channel. Tested basic operating characteristics and analyzed relation between device structure and operating characteristics of it. The experimental results showed that drive voltage was low and i-v characteristics was unsaturated. Grid voltage has great control effect on operating characteristics of organic static induction transistor. Therefore, we can improving the driving voltage and switching characteristics of organic transistor by reasonable design the device structure to form vertical conductive channel.

Keywords

copper compounds; organic field effect transistors; organic semiconductors; switches; thin film transistors; I-V characteristics; OFET device; copper-phthalocyanine organic thin film transistor; drive voltage; grid voltage; operating mechanism analysis; organic static induction transistor; switching characteristics; vertical conductive channel; Aluminum; Logic gates; OFETs; Switching circuits; CuPc; thin film transistor; vertical structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Measurement, Information and Control (ICMIC), 2013 International Conference on

Conference_Location

Harbin

Print_ISBN

978-1-4799-1390-9

Type

conf

DOI

10.1109/MIC.2013.6757940

Filename

6757940