DocumentCode :
3499080
Title :
Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz
Author :
Laskin, E. ; Nicolson, S.T. ; Chevalier, P. ; Chantre, A. ; Sautreuil, B. ; Voinigescu, S.P.
Author_Institution :
Edward S. Rogers Sr. Dept. of ECE, Toronto Univ., Ont.
fYear :
2006
fDate :
8-10 Oct. 2006
Firstpage :
1
Lastpage :
4
Abstract :
Static 2:1 frequency dividers with different latch configurations were designed and fabricated in two SiGe HBT technologies. The self-oscillation and maximum operation frequency are found to be correlated with the fMAX but not with the fT of the technology. A self-oscillation frequency of 77 GHz, the highest among static dividers in SiGe HBT technology, is achieved with the lowest power consumption of 122 mW from 3.3 V supply. Phase noise measurements of the 100-GHz input and 50-GHz output signals indicate ideal behavior with no measurable noise contribution from the divider. All fabricated dividers feature an integrated single-ended-to-differential transformer for ease of testing, yet broadband 20 GHz-100 GHz operation is maintained
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; frequency dividers; low-power electronics; 122 mW; 20 to 100 GHz; 3.3 V; HBT technologies; SiGe; integrated single-ended-to-differential transformer; latch configurations; static dividers; static frequency divider; Energy consumption; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Testing; Topology; SiGe HBT; Static frequency dividers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
ISSN :
1088-9299
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
Type :
conf
DOI :
10.1109/BIPOL.2006.311163
Filename :
4100231
Link To Document :
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