• DocumentCode
    3499121
  • Title

    Characterization and Modeling of Intermodulation Linearity in a 200 GHz SiGe HBT Technology

  • Author

    Niu, Guofu ; Li, Ying ; Feng, Zhiming ; Pan, Jun ; Sheridan, David C.

  • Author_Institution
    Dept. of ECE, Auburn Univ., AL
  • fYear
    2006
  • fDate
    8-10 Oct. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents experimental characterization and modeling of intermodulation linearity in a 200 GHz SiGe HBT technology. The impact of biasing current, voltage, and breakdown voltage is examined. IP3 is simulated using the VBIC, HICUM and Mextram model to evaluate the linearity capability of these models. The impact of avalanche and self-heating on IIP3 are examined. A weak avalanche is shown to have significant impact on IIP3
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; 200 GHz; HBT technology; HICUM; IIP3; IP3; Mextram; SiGe; VBIC; biasing current; breakdown voltage; intermodulation linearity; Breakdown voltage; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Pulse measurements; Radio frequency; Signal analysis; Silicon germanium; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2006
  • Conference_Location
    Maastricht
  • ISSN
    1088-9299
  • Print_ISBN
    1-4244-0458-4
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2006.311165
  • Filename
    4100233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3499121