Title :
Characterization and Modeling of Intermodulation Linearity in a 200 GHz SiGe HBT Technology
Author :
Niu, Guofu ; Li, Ying ; Feng, Zhiming ; Pan, Jun ; Sheridan, David C.
Author_Institution :
Dept. of ECE, Auburn Univ., AL
Abstract :
This paper presents experimental characterization and modeling of intermodulation linearity in a 200 GHz SiGe HBT technology. The impact of biasing current, voltage, and breakdown voltage is examined. IP3 is simulated using the VBIC, HICUM and Mextram model to evaluate the linearity capability of these models. The impact of avalanche and self-heating on IIP3 are examined. A weak avalanche is shown to have significant impact on IIP3
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device testing; 200 GHz; HBT technology; HICUM; IIP3; IP3; Mextram; SiGe; VBIC; biasing current; breakdown voltage; intermodulation linearity; Breakdown voltage; Electric breakdown; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Pulse measurements; Radio frequency; Signal analysis; Silicon germanium; USA Councils;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311165
