High Performances 3D Damascene MIM Capacitors Integrated in Copper Back-End Technologies

Author

Cremer, S. ; Richard, C. ; Benoit, D. ; Besset, C. ; Manceau, J.P. ; Farcy, A. ; Perrot, C. ; Segura, N. ; Marin, M. ; Bècu, S. ; Boret, S. ; Thomas, M. ; Guillaumet, S. ; Bonnard, A. ; Delpech, P. ; Bruyere, S.

Author_Institution

ST Microelectron., Crolles, France

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

RF and analog designs require high performances MIM capacitors. In order to continue downscaling of MIM devices, we have developed and integrated a 3D damascene MIM capacitor in the copper back-end of a 0.13 mum BICMOS technology. Si₃N₄ has been used as dielectric to reach excellent performances for a 5 fF/mum² capacitance density in term of leakage current, voltage linearity, dielectric relaxation, and reliability. This 3D architecture is a very promising candidate to carry on capacitance density increase.

Keywords

BiCMOS integrated circuits; capacitors; copper; dielectric materials; integrated circuit reliability; leakage currents; 3D damascene MIM capacitors; BICMOS technology; copper back end technologies; dielectric materials; high performances; leakage currents; reliability; BiCMOS integrated circuits; Capacitance; Copper; Dielectrics; Leakage current; Linearity; MIM capacitors; MIM devices; Radio frequency; Voltage; Dielectric material; Leakage currents; MIM Devices; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311168

Filename

4100236