Title :
A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures
Author :
Krithivasan, Ramkumar ; Lu, Yuan ; Najafizadeh, Laleh ; Zhu, Chendong ; Cressler, John D. ; Chen, Suheng ; Ulaganathan, Chandradevi ; Blalock, Benjamin J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
We investigate, for the first time, the design and implementation of a high-slew rate op-amp in SiGe BiCMOS technology capable of operation across very wide temperature ranges, and down to deep cryogenic temperatures. We achieve the first monolithic op-amp (for any material system) capable of operating reliably down to 4.3 K. Two variants of the SiGe BiCMOS op-amp were implemented using alternative biasing schemes, and the effects of temperature on these biasing schemes, and their impact on the overall op-amp performance, is investigated
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; cryogenic electronics; operational amplifiers; BiCMOS; deep cryogenic temperatures; high slew rate; operational amplifier; BiCMOS integrated circuits; Cryogenics; Germanium silicon alloys; Materials reliability; Moon; Operational amplifiers; Silicon germanium; Temperature distribution; Temperature sensors; USA Councils;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311170
