Title :
A new surface counter doped LDD (SCD-LDD) structure for deep submicron (0.35 mu m) MOSFETs
Author :
Chou, J.W. ; Chang, C.Y. ; Ko, Joe
Author_Institution :
Nat. Nano Device Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
With the technique of oblique rotating implantation, the large-angle-tilt (LAT) LDD implant was followed by a low energy and large angle tilt BF2 surface counter dope (named as SCD) implant which reduces the surface concentration of LDD region and results in a very light n- layer on top of the n- drain layer where the lateral electric fields and impact ionization rates are significantly suppressed. Consequently, a 0.35 mu m of effective channel length MOSFET was fabricated which revealed a superior and reliability over LATIDs. The hot carrier reliability is increased in this SCD-LDD structure as compared with controlled LATID´s.
Keywords :
CMOS integrated circuits; VLSI; doping profiles; hot carriers; insulated gate field effect transistors; ion implantation; 0.35 micron; 2D doping contours; Si:P, BF2; ULSI; deep submicron MOSFET; hot carrier reliability; impact ionization rates; ion implantation; large-angle-tilt; low energy; oblique rotating implantation; suppressed lateral electric fields; surface counter doped LDD; twin-well CMOS; CMOS technology; Counting circuits; Doping; Fabrication; Hot carriers; Impact ionization; Implants; Industrial electronics; Laboratories; MOSFETs;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263654
