Ruggedness Improvement by Protection

Author

van Bezooijen, A. ; de Graauw, Anton ; Ruijs, Lennart ; Pramm, Skule ; Chanlo, Christophe ; ten Dolle, H.J. ; van Straten, F. ; Mahmoudi, Reza ; Van Roermund, Arthur H M

Author_Institution

Philips Semicond., Nijmegen

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm

Keywords

adaptive control; avalanche breakdown; overvoltage protection; power amplifiers; voltage regulators; 2 W; 5 V; adaptive control; avalanche breakdown; cellular phone; over-voltage protection; power amplifier transistors; ruggedness improvement; Breakdown voltage; Circuits; Detectors; Packaging; Power amplifiers; Power generation; Power transistors; Protection; Temperature; Threshold voltage; Adaptive control; avalanche breakdown; over-voltage protection; power amplifiers; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311174

Filename

4100242