Fully coupled dynamic self heating model for power SOI Lateral Insulated Gate Bipolar Transistors

Author

Gamage, S. ; Pathirana, V. ; Udrea, F.

Author_Institution

Electr. Eng. Div., Cambridge Univ.

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

Several vertical IGBT electro-thermal models are currently available on circuit simulators. However, no reliable electro-thermal models have been proposed for the lateral insulated gate bipolar transistor (LGBT). In this paper, for the first time we present a fully coupled electrothermal model for a LIGBT structure based on a novel concept recently reported in (Napoli, et. al., 2005). The model relies on a systematic study of both isothermal and self heating behavior of the device. It is valid in both steady state and switching conditions. The model is further implemented in the Spice circuit simulator and validated against extensive numerical simulations and experimental data

Keywords

SPICE; insulated gate bipolar transistors; power semiconductor switches; silicon-on-insulator; IGBT; Spice circuit simulator; dynamic self heating model; electro thermal models; electrothermal effects; insulated gate bipolar transistors; power SOI lateral; power semiconductor switches; Circuit simulation; Coupling circuits; Electrothermal effects; Heating; Insulated gate bipolar transistors; Isothermal processes; Numerical simulation; Power system modeling; Power system reliability; Steady-state; Electrothermal effects; Insulated gate bipolar transistors; Modeling; Power semiconductor switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311177

Filename

4100245