Fully coupled dynamic self heating model for power SOI Lateral Insulated Gate Bipolar Transistors

Several vertical IGBT electro-thermal models are currently available on circuit simulators. However, no reliable electro-thermal models have been proposed for the lateral insulated gate bipolar transistor (LGBT). In this paper, for the first time we present a fully coupled electrothermal model for a LIGBT structure based on a novel concept recently reported in (Napoli, et. al., 2005). The model relies on a systematic study of both isothermal and self heating behavior of the device. It is valid in both steady state and switching conditions. The model is further implemented in the Spice circuit simulator and validated against extensive numerical simulations and experimental data