Interaction of threshold voltage and mobility temperature dependencies applied to stabilization of current and voltage

Author

Filanovsky, I.M. ; Lim, Su Tarn

Author_Institution

Alberta Univ., Edmonton, Alta., Canada

Volume

3

fYear

2000

fDate

2000

Firstpage

1022

Abstract

Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient (ZTC) bias point of an MOS transistor. In this case the temperature dependence of the output voltage for a diode-connected transistor is a linear function of absolute temperature with the slope controlled by bias current. The paper describes application of this temperature dependence to stabilization of current and voltage in reference circuits. Examples of design for 0.18 μm CMOS technology, and the circuit simulations are provided

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; circuit stability; compensation; integrated circuit design; reference circuits; 0.18 micron; CMOS technology; MOS transistor; bias current; bias point; circuit simulations; current stabilization; diode-connected transistor; mobility temperature dependencies; mutual compensation; output voltage; reference circuits; threshold voltage; voltage stabilization; zero temperature coefficient; CMOS technology; Circuit simulation; Diodes; Doping; FETs; Temperature control; Temperature dependence; Threshold voltage; Transconductance; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on

Conference_Location

Lansing, MI

Print_ISBN

0-7803-6475-9

Type

conf

DOI

10.1109/MWSCAS.2000.951390

Filename

951390