Title :
A Modular 0.18 um Analog / RFCMOS Technology Comprising 32 GHz FT RF-LDMOS and 40V Complementary MOSFET Devices
Author :
Lee, Zachary ; Zwingman, Robert ; Zheng, Jie ; Cai, Will ; Hurwitz, Paul ; Racanelli, Marco
Author_Institution :
Jazz Semicond., Inc., Newport Beach, CA
Abstract :
High-performance RF-LDMOS, medium voltage (8-12V), and high voltage (20-40V) NLDMOS and PLDMOS devices, integrated in a modular 0.18 mum analog CMOS/RFCMOS technology platform, are described. Device design, process integration, manufacturability, and reliability issues are discussed. These devices are among the highest performance in their class. The successful integration of these devices has enabled us to address our roadmap in the growing wireless, analog, mixed-signal, and power management markets
Keywords :
CMOS analogue integrated circuits; MOSFET; millimetre wave field effect transistors; 0.18 micron; 20 to 40 V; 32 GHz; 40 V; 8 to 12 V; NLDMOS devices; PLDMOS devices; RF-LDMOS; RFCMOS technology; analog CMOS technology; complementary MOSFET devices; CMOS technology; Driver circuits; Energy management; MOSFET circuits; Medium voltage; Power amplifiers; Process design; Resistors; Silicon; USA Councils; CMOS analog integrated circuits; LDMOS; Silicon RF-LDMOS technology; power devices;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311116
