DocumentCode
3499601
Title
Ambipolar semiconductor receiver application in THz range
Author
Kamenev, Yu.E. ; Korzh, V.G. ; Sizov, F.F. ; Momot, N.I.
Author_Institution
Inst. of Radiophys. & Electron., NASU, Kharkov, Ukraine
fYear
2010
fDate
21-26 June 2010
Firstpage
1
Lastpage
2
Abstract
In this paper, the theoretical and experimental research in the millimeter range have allowed to offer THz range semiconductor receiver, which uses the phenomenon of ambipolar diffusion in a thin layer of a semiconductor. For the optimal performance of the proposed receiver it is required to use a special device for signal displacement and pick up from the sensing element, as well as cryogenic device for setup and holding required temperature. THz rage laser with a wavelength λ= 190 and 337 microns is used as radiation source.
Keywords
II-VI semiconductors; cadmium compounds; diffusion; laser beam effects; mercury compounds; millimetre wave receivers; Hg1-xCdxTe; ambipolar diffusion; cryogenic device; laser radiation source; semiconductor receiver; sensing element; signal displacement; terahertz range;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on
Conference_Location
Kharkiv
Print_ISBN
978-1-4244-7900-9
Type
conf
DOI
10.1109/MSMW.2010.5546030
Filename
5546030
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