Ambipolar semiconductor receiver application in THz range

In this paper, the theoretical and experimental research in the millimeter range have allowed to offer THz range semiconductor receiver, which uses the phenomenon of ambipolar diffusion in a thin layer of a semiconductor. For the optimal performance of the proposed receiver it is required to use a special device for signal displacement and pick up from the sensing element, as well as cryogenic device for setup and holding required temperature. THz rage laser with a wavelength λ= 190 and 337 microns is used as radiation source.