Title :
Joint Extraction of the Base and Collector Resistances with the Base-Collector Capacitance Split of HBT/BJT Transistors
Author :
Huszka, Z. ; Seebacher, E. ; Pflanzl, W.
Author_Institution :
Austriamicrosystems AG
Abstract :
A novel approach is described for the simultaneous extraction of the parasitic base and collector resistances along with the internal collector capacitance cjc of HBT/BJT devices. A strong impact of the external access resistances rbx and rcx on the accuracy of cjc extraction is revealed. The interaction is strictly observed at the determination of these and the internal base and collector resistance parameters
Keywords :
electric resistance measurement; heterojunction bipolar transistors; semiconductor device measurement; HBT/BJT transistors; base resistance extraction; base-collector capacitance split; collector resistance extraction; external access resistances; internal collector capacitance; Admittance; Bipolar transistors; Electric variables measurement; Equations; Frequency; Heterojunction bipolar transistors; Parasitic capacitance; Testing; Voltage; Yttrium; Bipolar transistor modeling; base resistance; collector capacitance split; collector resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location :
Maastricht
Print_ISBN :
1-4244-0458-4
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2006.311122
