Effect of narrow-emitter on impurity distribution in polysilicon bipolar transistors

Author

Wang, Chih Hsin

Author_Institution

Adv. Technol. Devel., Philips Semiconductors, Sunnyvale, CA, USA

fYear

1993

fDate

1993

Firstpage

310

Lastpage

314

Abstract

A narrow-emitter effect in submicrometer, single-polysilicon emitter BJTs is investigated. The effect is a result of the two dimensional diffusion of the impurity atoms that are redistributed in the polysilicon during thermal cycles. This effect results in geometry scaling-dependent doping profiles in the emitter and base regions, and is more significant for submicrometer and deep-submicrometer BJTs. Electrical measurements and two-dimensional process simulations were performed to demonstrate this effect.

Keywords

BiCMOS integrated circuits; VLSI; bipolar transistors; doping profiles; elemental semiconductors; impurity distribution; silicon; BiCMOS technology; SUPREM 4; VLSI circuits; bipolar transistors; deep-submicrometer BJTs; geometry scaling-dependent doping profiles; impurity atoms two dimensional diffusion; impurity distribution effect; polycrystalline Si emitter; semiconductor; submicrometer BJT; thermal cycles; two-dimensional process simulations; Bipolar transistors; Breakdown voltage; Capacitance; Capacitance-voltage characteristics; Doping profiles; Electric variables measurement; Performance evaluation; Semiconductor impurities; Silicon; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-0978-2

Type

conf

DOI

10.1109/VTSA.1993.263669

Filename

263669