Compact Modeling of GaAs Heterojunction Bipolar Transistors using the new Mextram 3500 model

Author

van der Toorn, Ramses ; Paasschens, J.C.J. ; Dohmen, J.J. ; Pijper, R.M.T. ; Balm, B.N.

Author_Institution

Philips Res., Eindhoven

fYear

2006

fDate

8-10 Oct. 2006

Firstpage

1

Lastpage

4

Abstract

We adapt the Mextram 504 compact model for Si and SiGe bipolar transistors to make it suitable for compact modeling of GaAs HBT´s. We discuss the different physics included in the new model, Mextram 3500, and demonstrate the capabilities of the new model on GaAs HBT characteristic simulations. We also show an example of advanced GaAs PA-circuit simulations that have been performed with our model

Keywords

Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; silicon; GaAs; GaAs HBT; GaAs heterojunction bipolar transistor model; Mextram 3500 model; Mextram 504 compact model; Si bipolar transistors; SiGe; SiGe bipolar transistors; semiconductor device model; Bipolar transistors; Capacitance; Circuit simulation; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Physics; Power system modeling; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2006

Conference_Location

Maastricht

ISSN

1088-9299

Print_ISBN

1-4244-0458-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2006.311123

Filename

4100258