DocumentCode
3499704
Title
Impact of Collector-Base Space Charge Region on RF Noise in Bipolar Transistors
Author
Xia, Kejun ; Niu, Guofu
Author_Institution
Electr. & Comput. Eng. Dept., Auburn Univ., AL
fYear
2006
fDate
8-10 Oct. 2006
Firstpage
1
Lastpage
4
Abstract
This paper examines the impact of collector-base space charge region (CB SCR) on RF noise in scaled bipolar transistors by solving the Langevin equation of electron noise transport. The van Vliet model, which was derived for intrinsic base only, was evaluated for scaled bipolar transistors in which CB SCR transit time is most significant. An improved noise model accounting for CB SCR effects is derived
Keywords
bipolar transistors; semiconductor device models; semiconductor device noise; space charge; CB SCR effects; CB SCR transit time; Langevin equation; RF noise; bipolar transistors; collector-base space charge region; electron noise transport; semiconductor device model; semiconductor device noise; van Vliet model; Bipolar transistors; Boundary conditions; Electrons; Equations; Integrated circuit modeling; Integrated circuit noise; Low-frequency noise; Radio frequency; Space charge; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2006
Conference_Location
Maastricht
ISSN
1088-9299
Print_ISBN
1-4244-0458-4
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2006.311126
Filename
4100261
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