Title :
New submicron non-volatile memory modules for 16/32-bit devices
Author :
Kuo, Clinton ; Morton, Bruce ; Toms, Thomas ; Weidner, Mark ; Chrudimsky, Dave ; Choe, Henry ; Bowers, Mickey ; Kim, Yeon-Seuk ; Chang, Ko-Min ; Smith, Philp
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
Development of new submicron non-volatile memory modules, including an EEPROM with unique programmable redundancy and a block erasable flash EEPROM, for 16-bit and 32-bit devices is reported. Optional process modules required for the non-volatile memories are developed for integration into the baseline logic process based on 0.65 mu double metal CMOS technology.
Keywords :
CMOS integrated circuits; EPROM; integrated memory circuits; modules; 0.65 micron; 16 bit; 32 bit; baseline logic process; block erasable flash EEPROM; double metal CMOS technology; process modules; programmable redundancy; submicron nonvolatile memory modules; CMOS logic circuits; CMOS process; CMOS technology; EPROM; Error correction codes; Logic devices; Microcontrollers; Nonvolatile memory; Redundancy; Research and development;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1993. Proceedings of Technical Papers. 1993 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-0978-2
DOI :
10.1109/VTSA.1993.263677
