Structural and magnito-resonance properties of indium phosphide

The results of investigations of the structural and magneto-resonance properties of both the single-crystals and porous InP samples doped by S and Zn with the charge carrier concentration N=2.3*10¹⁸ cm^-3 have been presented in this paper. As it follows from the ample´s morphology the active cavitation was observed for all the samples under test. It has been shown that in order to decrease the electrolyte effect on the porous surface formation it is advisable to change the etching regime (the time and the current density) on a more soft one or to use the more diluted solution of the etching agent. Really, the HCl-based etching agents allow one to obtain a layer composed basically of the nanopores that determines in the final analysis the porous films quality. The EPR-line parameters have been determined. The analysis of experimental EPR spectra points out a weak dependence of the line width on the temperature up to the liquid nitrogen one. Finally, the measured EPR spectra allow one to assume a high efficiency of the phosphorus vacation and formation of the disturbed bonds (D-centers) in such semiconductors.