DocumentCode
3499947
Title
Study of signal programming to improve EEPROM cell reliability
Author
Canet, P. ; Bouchakour, R. ; Harabech, N. ; Boivin, Ph ; Mirabel, J.M. ; Plossu, C.
Author_Institution
Lab. Maeriaux et Microelectronique de Provence, Inst. Charles Fabry, Marseille, France
Volume
3
fYear
2000
fDate
2000
Firstpage
1144
Abstract
This paper presents a study of EEPROM cell programming in order to increase the reliability of the device. Simulations show that it is possible to decrease the electric field across the tunnel oxide with a new programming signal. We obtain the same injected charge without any change in the device. This study allows us to improve the endurance of the memory cell
Keywords
EPROM; PLD programming; integrated circuit modelling; integrated circuit reliability; integrated memory circuits; tunnelling; EEPROM cell programming; EEPROM cell reliability; cell electrical behavior; compact model; electric field; endurance test; injected charge; linear current model; long-term reliability; memory cell endurance improvement; programming signal; reliability; signal programming; tunnel oxide; Analytical models; Circuit simulation; Degradation; EPROM; MOSFET circuits; Nonvolatile memory; PROM; Shape; Threshold voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location
Lansing, MI
Print_ISBN
0-7803-6475-9
Type
conf
DOI
10.1109/MWSCAS.2000.951417
Filename
951417
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