DocumentCode :
3500010
Title :
Clamp mode package diffusion welded power SiC Schottky diodes
Author :
Korolkov, O. ; Kuznetsova, N. ; Rang, T.
Author_Institution :
Dept. of Electron., Tallinn Univ. of Technol.
fYear :
2006
fDate :
2-4 Oct. 2006
Firstpage :
1
Lastpage :
4
Abstract :
This paper is devoted to the results of a diffusion welding technique applied to solve the problem of packaging for large area SiC Schottky diodes. The forward current-voltage characteristics measured at 75 A measured for packaged diodes yields 250 A/cm2 (70A) at 1.9 V forward voltage. Reverse recovery time for packaged diodes was in the range of 29-36 ns
Keywords :
Schottky diodes; semiconductor device packaging; silicon compounds; welding; wide band gap semiconductors; 1.9 V; 29 to 36 ns; 75 A; SiC; clamp mode package; diffusion welding technique; power SiC Schottky diodes; Clamps; Current measurement; Fabrication; Metallization; Packaging; Schottky barriers; Schottky diodes; Silicon carbide; Substrates; Welding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Baltic Electronics Conference, 2006 International
Conference_Location :
Tallinn
ISSN :
1736-3705
Print_ISBN :
1-4244-0414-2
Electronic_ISBN :
1736-3705
Type :
conf
DOI :
10.1109/BEC.2006.311059
Filename :
4100280
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3500010
بازگشت