DocumentCode
3500029
Title
Static and dynamic behavior of the SiC complementary JBS structures
Author
Kurel, Raido ; Rang, Toomas
Author_Institution
Dept. of Electron., TTU, Tallinn
fYear
2006
fDate
2-4 Oct. 2006
Firstpage
1
Lastpage
4
Abstract
This paper presents results of simulation of SiC based complementary JBS devices. The inner processes of JBS have been investigated to get better understanding of the main parameters inside the JBS device, which have most important influence on electrical characteristics of the device and which can not be measured by traditional techniques. The best complementary solutions of JBS devices for power application are found in means of device crystal poly type (4H- versus 6H-SiC), and of Schottky contact metal work function values
Keywords
semiconductor devices; silicon compounds; wide band gap semiconductors; Schottky contact metal work function values; SiC; complementary JBS structures; electrical characteristics; power application; Charge carrier processes; Charge carriers; Doping; Electric variables; Electric variables measurement; Maxwell equations; Poisson equations; Schottky barriers; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Baltic Electronics Conference, 2006 International
Conference_Location
Tallinn
ISSN
1736-3705
Print_ISBN
1-4244-0414-2
Electronic_ISBN
1736-3705
Type
conf
DOI
10.1109/BEC.2006.311060
Filename
4100281
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