DocumentCode
3500109
Title
The study of the effects of substrate temperature on the PECVD SiO 2 layer using IPL 200E/D system
Author
Akhter, Sarkar Mahbub ; Majlis, Burhanuddin Yeop ; Shaari, Sahbudin
Author_Institution
Dept. of Electr. Electron. & Syst. Eng., Univ. Kebangsaan, Malaysia
fYear
1996
fDate
26-28 Nov 1996
Firstpage
293
Lastpage
296
Abstract
The thickness of the SiO2 insulating film deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) has been studied. The thickness of the oxidation layer depends upon a numbers of factors. Along with the RF power, the thickness also depends on the flow rate of the two gases, i.e. N2O and SiH4, the reactor pressure and substrate temperature. In this paper the dependence of thickness upon the temperature has been studied with different temperature from 100°C to 300°C. While developing the insulation layer the other factors as pressure, flow rate and RF power are kept constant
Keywords
insulating thin films; oxidation; plasma CVD; plasma CVD coatings; semiconductor technology; silicon compounds; temperature; 100 to 300 C; IPL 200E/D system; N2O; PECVD SiO2 layer; Si; SiH4; SiO2 insulating film thickness; SiO2-Si; chemical vapor deposition; constant RF power; constant flow rate; constant reactor pressure; oxidation layer; plasma enhanced CVD; substrate temperature; Chemical vapor deposition; Gases; Inductors; Insulation; Oxidation; Plasma chemistry; Plasma temperature; Radio frequency; Substrates; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location
Penang
Print_ISBN
0-7803-3388-8
Type
conf
DOI
10.1109/SMELEC.1996.616501
Filename
616501
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