Title :
High-power narrow-aperture multimode AlGaAs-based lasers at 840 nm
Author :
O´Brien, S. ; Ransom, H. ; Hagberg, M. ; Zucker, E. ; Zhao, H.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
Summary form only given. We have demonstrated record powers and brightnesses from narrow aperture broad-area AlGaAs quantum well lasers. We have also shown that this higher-power laser structure is capable of reliable operation at an elevated temperature of 60 C and at a high facet loading.
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; infrared sources; laser modes; laser reliability; laser transitions; quantum well lasers; 60 C; 840 nm; AlGaAs; brightnesses; elevated temperature; high facet loading; high-power narrow-aperture multimode AlGaAs-based lasers; higher-power laser structure; narrow aperture broad-area AlGaAs quantum well lasers; reliable operation; Apertures; Brightness; Diodes; Fiber lasers; Life testing; Power generation; Power lasers; Printing; Solid lasers; Thermal resistance;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.675800
