The substrate doping density effect on submicron MOSFET´s characteristics

Author

Saha, Babul K. ; Shaari, S.B.H. ; Majlis, B.Y.

Author_Institution

Semicond. Technol. Center, Taman Technol. Malaysia, Malaysia

fYear

1996

fDate

26-28 Nov 1996

Firstpage

297

Lastpage

301

Abstract

The effect of substrate doping density on the electrical behaviors of submicron n-MOSFET has been studied analytically. A previously developed analytical submicron MOSFET model has been used in this work. The model has been simulated for different characteristics with substrate doping density as only variable input parameter. From the simulation results, the trends of variation of different characteristics with the variation of the substrate doping density is studied and the higher doping density is found to be reliable for the submicron MOSFET operation

Keywords

MOSFET; doping profiles; semiconductor device models; semiconductor doping; substrates; MOSFET model; NMOSFET; electrical behavior; n-MOSFET; submicron MOSFET characteristics; substrate doping density effect; Analytical models; Circuit synthesis; Integrated circuit reliability; Integrated circuit technology; MOSFET circuits; Semiconductor device doping; Semiconductor process modeling; Substrates; Ultra large scale integration; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on

Conference_Location

Penang

Print_ISBN

0-7803-3388-8

Type

conf

DOI

10.1109/SMELEC.1996.616502

Filename

616502