DocumentCode
3500460
Title
Current sensivity of Si mosfet to terahertz irradiation
Author
But, D.B. ; Golenkov, O.G.
Author_Institution
Lashkariev Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
fYear
2010
fDate
21-26 June 2010
Firstpage
1
Lastpage
1
Abstract
There is an increased interest in the use of terahertz (THz) radiation (frequency range 0.1-10 THz) for various applications in the fields of security screening, medicine, radio astronomy, etc. Nowadays main concepts of THz radiation detection are well-studied which allowed to create such types of THz receivers as low temperature quasiparticle detectors, Schottky diodes, micro-bolometers, MOSFET and HEMT-detectors, etc.
Keywords
MOSFET; terahertz waves; Si MOSFET; THz radiation detection; THz receiver; current sensivity; frequency 0.1 THz to 10 THz; terahertz irradiation;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2010 International Kharkov Symposium on
Conference_Location
Kharkiv
Print_ISBN
978-1-4244-7900-9
Type
conf
DOI
10.1109/MSMW.2010.5546073
Filename
5546073
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