Title :
Post Si CMOS graphene nanoelectronics
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
IBM graphene FETs (GFET) yield the highest cut-off frequency (fT) values reported: >;200 GHz on epitaxially grown SiC wafer and >;150 GHz1 on CVD-grown-transferred onto Si wafer which are well above Si MOSFET fT-Lg trend in ITRS2. A novel reconfigurable graphene p-n junction based logic device is also introduced. Its switching is accomplished by using co-planar split gates that modulate the properties that are unique to graphene including angular dependent carrier reflection which can dynamically change the device operation, leading to reconfigurable multi-functional logic.
Keywords :
CMOS integrated circuits; chemical vapour deposition; field effect transistors; graphene; logic devices; nanoelectronics; p-n junctions; silicon compounds; CVD; GFET; ITRS; Si CMOS graphene nanoelectronics; Si MOSFET; SiC wafer; angular dependent carrier reflection; coplanar split gates; graphene FET; logic device; reconfigurable graphene p-n junction; CMOS integrated circuits; Copper; Logic gates; Optical surface waves; P-n junctions; Silicon; Silicon carbide;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872211
