Post Si CMOS graphene nanoelectronics

Author

Chun-Yung Sung

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

IBM graphene FETs (GFET) yield the highest cut-off frequency (f_T) values reported: >;200 GHz on epitaxially grown SiC wafer and >;150 GHz¹ on CVD-grown-transferred onto Si wafer which are well above Si MOSFET f_T-L_g trend in ITRS². A novel reconfigurable graphene p-n junction based logic device is also introduced. Its switching is accomplished by using co-planar split gates that modulate the properties that are unique to graphene including angular dependent carrier reflection which can dynamically change the device operation, leading to reconfigurable multi-functional logic.

Keywords

CMOS integrated circuits; chemical vapour deposition; field effect transistors; graphene; logic devices; nanoelectronics; p-n junctions; silicon compounds; CVD; GFET; ITRS; Si CMOS graphene nanoelectronics; Si MOSFET; SiC wafer; angular dependent carrier reflection; coplanar split gates; graphene FET; logic device; reconfigurable graphene p-n junction; CMOS integrated circuits; Copper; Logic gates; Optical surface waves; P-n junctions; Silicon; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872211

Filename

5872211