Title :
Graphene transistors 2011
Author_Institution :
Tech. Univ. Ilmenau, Ilmenau, Germany
Abstract :
Graphene is a promising electronic material and numerous experts already see it as the successor of silicon. Many groups are fabricating graphene transistors, and graphene MOSFETs with record cutoff frequencies of 300 GHz have been reported. However, in spite of this progress, the prospects of graphene transistors for future electronics are still not clear. The aim of the present paper is to shed some light on the merits and problems of graphene transistors and to review their current status.
Keywords :
MOSFET; graphene; millimetre wave field effect transistors; electronic material; frequency 300 GHz; graphene MOSFET; graphene transistors; Logic gates; MOSFETs; Photonic band gap; Radio frequency; Switches;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872213