DocumentCode :
3500643
Title :
Graphene transistors 2011
Author :
Schwierz, Frank
Author_Institution :
Tech. Univ. Ilmenau, Ilmenau, Germany
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
1
Lastpage :
2
Abstract :
Graphene is a promising electronic material and numerous experts already see it as the successor of silicon. Many groups are fabricating graphene transistors, and graphene MOSFETs with record cutoff frequencies of 300 GHz have been reported. However, in spite of this progress, the prospects of graphene transistors for future electronics are still not clear. The aim of the present paper is to shed some light on the merits and problems of graphene transistors and to review their current status.
Keywords :
MOSFET; graphene; millimetre wave field effect transistors; electronic material; frequency 300 GHz; graphene MOSFET; graphene transistors; Logic gates; MOSFETs; Photonic band gap; Radio frequency; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-8493-5
Type :
conf
DOI :
10.1109/VTSA.2011.5872213
Filename :
5872213
Link To Document :
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