Advanced CMOS technologies using III-V/Ge channels

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performance and low power advanced LSIs in the future. In addition, the heterogeneous integration of these materials with Si can provide a variety of More-than-Moore and Beyond CMOS applications, where various III-V/Ge functional devices can be co-integrated. In this presentation, we review the current status of III-V/Ge CMOS, the critical issues and possible solutions to break through the difficulties.