Title :
An automated reverse-bias second-breakdown transistor tester
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
An automated instrument for generating curves for the reverse bias, safe operating area of transistors nondestructively is described. A technique for detecting second breakdown that makes automation possible is highlighted. Methods to reduce stress to the device under test are discussed, as are several other innovations that enhance automation. Measurements using the tester are described, and limitations on nondestructive testability are discussed
Keywords :
automatic test equipment; automatic testing; semiconductor device testing; transistors; ATE; automatic testing; nondestructive testability; reverse bias; safe operating area; second breakdown; semiconductor device testing; stress; transistor; Automatic testing; Automation; Breakdown voltage; Circuit testing; Clamps; Electric breakdown; Inductors; Instruments; NIST; Nondestructive testing;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1991. APEC '91. Conference Proceedings, 1991., Sixth Annual
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-0024-6
DOI :
10.1109/APEC.1991.146192