In0.7Ga0.3As channel n-MOSFETs with a novel self-aligned Ni-InGaAs contact formed using a salicide-like metallization process

Spacer-less In_0.7Ga_0.3As n-MOSFETs with self-aligned Ni-InGaAs contacts formed using a direct reaction between Ni and InGaAs were demonstrated. A novel salicide-like metallization process was developed to achieve self-aligned Ni-InGaAs contacts, comprising the steps of Ni reaction with In_xGa_1-xAs and selective removal of excess Ni. Dopantless n-MOSFETs with metallic Ni-InGaAs source/drain (S/D) and n-MOSFETs with Si-doped S/D and Ni-InGaAs contacts were compared. Si implant performed before the metallization effectively suppressed the off-state current I_OFF by more than 10 times.