Detailed high-k/In0.53Ga0.47As interface understanding to enable improved In0.53Ga0.47As gate stack quality

Author

Huang, J. ; Goel, N. ; Lysaght, P. ; Veksler, D. ; Nagaiah, P. ; Oktyabrsky, Serge ; Price, J. ; Zhao, Hang ; Chen, Y.T. ; Lee, Jong Chul ; Woicik, J.C. ; Majhi, P. ; Kirsch, P.D. ; Jammy, R.

Author_Institution

SEMATECH, Gaithersburg, MD, USA

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

Thermal stability of the high-k/In_0.53Ga_0.47As interface has been analyzed by both physical and electrical methods for the first time. It has been found that As-O and In-O bonds decompose and Ga-O bonds form above 400°C, as shown by XPS and corroborated by TEM, SIMS and EDX. Electrically, this interface decomposition resulted in increased frequency dispersion (accumulation), C-V shift, and mobility degradation. These results provide additional insights into improving the III-V/high-k interface as a candidate for 11nm CMOS technology.

Keywords

CMOS integrated circuits; III-V semiconductors; X-ray chemical analysis; X-ray photoelectron spectra; bonds (chemical); gallium arsenide; high-k dielectric thin films; indium compounds; thermal stability; transmission electron microscopy; C-V shift; CMOS technology; EDX; III-V-high-k interface; In_0.53Ga_0.47As; SIMS; TEM; XPS; chemical bond; electrical method; frequency dispersion; gate stack quality; interface decomposition; mobility degradation; physical method; size 11 nm; thermal stability; Aluminum oxide; Annealing; Gallium; Indium gallium arsenide; Kinetic energy; Temperature measurement; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872218

Filename

5872218