Variability and feasibility of CVD graphene interconnect

Author

Kang, C.G. ; Lee, S.K. ; Lee, Y.G. ; Hwang, H.J. ; Cho, C.H. ; Heo, J.S. ; Chung, H.J. ; Yang, H.J. ; Seo, S.E. ; Lee, B.H.

Author_Institution

Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

Graphene and its derivatives (graphite, CNT) have very high conductivity and critical current density higher than 10⁸ A/cm², which can be utilized in interconnect applications. Theoretically, a doped graphene is predicted to have better performance than Cu as an interconnect conductor. However, the feasibility of graphene interconnect has not been experimentally examined systematically. In this paper, the critical current density of single layer and multilayer graphene are studied to provide insights about the feasibility of graphene interconnect technology.

Keywords

chemical vapour deposition; graphene; integrated circuit interconnections; multilayers; C; CVD graphene interconnect; critical current density; graphene interconnect technology; multilayer graphene; single layer graphene; Conductivity; Copper; Critical current density; Electric breakdown; Logic gates; Materials; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872224

Filename

5872224