Title :
Chances and challenges of emerging memories for DRAM application
Author :
Chung, Sung-Woong
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
The interests in various emerging memories are rapidly increasing. Among the emerging memories, only STT-RAM and ZRAM show the similar performance to DRAM, in terms of write endurance and write speed. They should be potential candidates for DRAM application, since many outstanding results have been demonstrated recently in spite of the fairly new technology. Nevertheless, the technical maturity and cost effectiveness of the emerging technologies should require the further research and development.
Keywords :
DRAM chips; research and development; DRAM; STT-RAM; ZRAM; research and development; Arrays; Logic gates; Microprocessors; Random access memory; Switches; Thermal stability; DRAM; STT-RAM; ZRAM; floating body cell;
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-8493-5
DOI :
10.1109/VTSA.2011.5872229