• DocumentCode
    3500929
  • Title

    Chances and challenges of emerging memories for DRAM application

  • Author

    Chung, Sung-Woong

  • Author_Institution
    R&D Div., Hynix Semicond. Inc., Icheon, South Korea
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The interests in various emerging memories are rapidly increasing. Among the emerging memories, only STT-RAM and ZRAM show the similar performance to DRAM, in terms of write endurance and write speed. They should be potential candidates for DRAM application, since many outstanding results have been demonstrated recently in spite of the fairly new technology. Nevertheless, the technical maturity and cost effectiveness of the emerging technologies should require the further research and development.
  • Keywords
    DRAM chips; research and development; DRAM; STT-RAM; ZRAM; research and development; Arrays; Logic gates; Microprocessors; Random access memory; Switches; Thermal stability; DRAM; STT-RAM; ZRAM; floating body cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872229
  • Filename
    5872229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3500929