DocumentCode :
3500929
Title :
Chances and challenges of emerging memories for DRAM application
Author :
Chung, Sung-Woong
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
1
Lastpage :
2
Abstract :
The interests in various emerging memories are rapidly increasing. Among the emerging memories, only STT-RAM and ZRAM show the similar performance to DRAM, in terms of write endurance and write speed. They should be potential candidates for DRAM application, since many outstanding results have been demonstrated recently in spite of the fairly new technology. Nevertheless, the technical maturity and cost effectiveness of the emerging technologies should require the further research and development.
Keywords :
DRAM chips; research and development; DRAM; STT-RAM; ZRAM; research and development; Arrays; Logic gates; Microprocessors; Random access memory; Switches; Thermal stability; DRAM; STT-RAM; ZRAM; floating body cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-8493-5
Type :
conf
DOI :
10.1109/VTSA.2011.5872229
Filename :
5872229
Link To Document :
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