Efficient pattern relocation for EUV blank defect mitigation

Blank defect mitigation is a critical step for extreme ultraviolet (EUV) lithography. Targeting the defective blank, a layout relocation method, to shift and rotate the whole layout pattern to a proper position, has been proved to be an effective way to reduce defect impact. Yet, there is still no published work about how to find the best pattern location to minimize the impact from the buried defects with reasonable defect model and considerable process variation control. In this paper, we successfully present an algorithm that can optimally solve this pattern relocation problem. Experimental results validate our method, and the relocation results with full scale layouts generated from Nangate Open Cell Library has shown great advantages with competitive runtimes compared to the existing commercial tool.