Title :
SiC Schottky Diode for Use in Power Convertors
Author :
Pikkov, M. ; Rang, T. ; Pokatilov, A.
Author_Institution :
Dept. of Electron., ITU, Tallinn
Abstract :
The specification characteristics of power electronic applications can be improved by use of the recent high-speed power devices. The Schottky structure has been developed for direct type converter circuits. The description of real layout and testing methodology of an experimental sample of 4H-SiC Schottky barrier diode manufactured by diffusion welding has been given. Presented results of timing for reverse recovery time are described according to the sample of the direct current regulator
Keywords :
Schottky diodes; power convertors; silicon compounds; wide band gap semiconductors; SiC; SiC Schottky diode; diffusion welding; direct current regulator; direct type converter circuits; power convertors; reverse recovery time; Circuit testing; Converters; Manufacturing; Power electronics; Regulators; Schottky barriers; Schottky diodes; Silicon carbide; Timing; Welding;
Conference_Titel :
Baltic Electronics Conference, 2006 International
Conference_Location :
Tallinn
Print_ISBN :
1-4244-0414-2
Electronic_ISBN :
1736-3705
DOI :
10.1109/BEC.2006.311109
