Title :
Synthesis of multiferroic Ba0.7Sr0.3TiO3-based thin films for memory devices by chemical solution deposition
Author :
Bin Li ; Chunqing Wang ; Wei Liu ; Ying Zhong ; Zhixin Zhang
Author_Institution :
State Key Lab. of Adv. Welding & Joining, Harbin Inst. of Technol., Harbin, China
Abstract :
The multiferroic magnetoelectric Ba0.7Sr0.3TiO3-based films were prepared by sol-gel method. After annealing at 700 °C, the barium strontium titanate films showed highly crystalline structure with no impurity phase. The Ba0.7Sr0.3TiO3/Ba0.7Sr0.3TiO3-Ni0.8Zn0.2Fe2O4/Ba0.7Sr0.3TiO3 (BSTO/BSTO-NZFO/BSTO) thin films presented higher saturation polarization and lower leakage current density than BSTO-NZFO. The magnetic property of BSTO/ BSTO-NZFO/BSTO film was studied at room temperature, and the values of saturation magnetization and coercivity were 57.2 memu/cm3 and 7.156 Oe, respectively.
Keywords :
annealing; barium compounds; coercive force; current density; dielectric polarisation; ferroelectric thin films; liquid phase deposition; magnetic thin film devices; magnetic thin films; magnetoelectric effects; memory architecture; multiferroics; nickel compounds; sol-gel processing; strontium compounds; zinc compounds; Ba0.7Sr0.3TiO3-Ba0.7Sr0.3TiO3-Ni0.8Zn0.2Fe2O4-Ba0.7Sr0.3TiO3; annealing; chemical solution deposition; coercivity; crystalline structure; leakage current density; magnetic property; memory devices; multiferroic magnetoelectric-based films; multiferroic-based thin films synthesis; saturation magnetization; saturation polarization; sol-gel method; temperature 293 K to 298 K; Annealing; Films; Leakage current; Magnetic hysteresis; Magnetoelectric effects; Saturation magnetization; X-ray scattering;
Conference_Titel :
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4673-1682-8
Electronic_ISBN :
978-1-4673-1680-4
DOI :
10.1109/ICEPT-HDP.2012.6474557
