• DocumentCode
    3501103
  • Title

    Power islands: a high-level technique for counteracting leakage in deep sub-micron

  • Author

    Dal, Deniz ; Nunez, Adrian ; Mansouri, Nazanin

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Syracuse Univ., NY
  • fYear
    2006
  • fDate
    27-29 March 2006
  • Lastpage
    170
  • Abstract
    With the migration to deep sub-micron (DSM) process technologies, the static power (leakage) has become the major contributor to the design´s overall power consumption. In this work, we show experiments that illustrate the significant increase in the ratio of the leakage to the total power as the DSM process nodes shrink. We also present a high-level design/synthesis method, called power islands that minimize the leakage in the circuit by partitioning it into islands. Each island is a cluster of logic whose power can be controlled independent from the rest of the circuit, and hence can be completely powered down when all the logic contained within it is idling. The partitioning is done in such a way that the components with maximally overlapping lifetimes are placed on the same island. A main benefit of power islands is the elimination of leakage in inactive components during the power down cycles of the islands, and hence a decrease in circuit´s power consumption. The effectiveness of the proposed technique is demonstrated through several examples implemented with 4 different feature sizes: 180 nm, 130 nm, 100 nm and 70 nm. These experiments showed improvements in leakage ranging from 41% to 80% at 70 nm due to power islands
  • Keywords
    high level synthesis; leakage currents; logic partitioning; 100 nm; 130 nm; 180 nm; 70 nm; deep sub-micron process; high-level synthesis; overlapping lifetimes; power consumption; power islands; static power leakage; Cellular phones; Circuit synthesis; Consumer electronics; Cooling; Design methodology; Energy consumption; High level synthesis; Logic circuits; Minimization; Portable computers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2006. ISQED '06. 7th International Symposium on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7695-2523-7
  • Type

    conf

  • DOI
    10.1109/ISQED.2006.103
  • Filename
    1613131