Study on solid phase epitaxy formed embedded SiC by tilted cluster carbon ion implantation

Author

Dai, S.-H. ; Liao, R. ; Huang, R.-M. ; Chin, L.-F. ; Liu, Y.-R. ; Kuo, P. ; Chen, C.-Y. ; Chiu, K.-L. ; Li, C.-I. ; Tsai, C.-H. ; Tsai, C.-T. ; Liang, C.-W.

Author_Institution

ATD Div., United Microelectron. Corp. (UMC), Tainan, Taiwan

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

Several approaches of solid phase epitaxy (SPE) formed embedded SiC (eSiC) scheme have been investigated on 28 nm node technology. The single SPE thermal process by LSA only with post S/D scheme is reported to accommodate high carbon concentration as well as low sheet resistance in this work. Cluster carbon with tilted angle implantation is designed to further simplify process and increase channel strain. By this tilted cluster-carbon implantation approach, a 69.6% improvement on device mobility is achieved. Moreover, the device mobility can be further improved by combining vertical and optimized tilted cluster carbon implantation as predicted by simulation.

Keywords

MOSFET; carrier mobility; ion implantation; limited space charge accumulation; silicon compounds; solid phase epitaxial growth; wide band gap semiconductors; LSA; SPE thermal process; SiC:C; carbon concentration; device mobility; eSiC; embedded SiC; node technology; post S/D scheme; sheet resistance; size 28 nm; solid phase epitaxy; tilted cluster carbon ion implantation; Carbon; Implants; Ion implantation; Logic gates; MOS devices; Resistance; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872236

Filename

5872236