DocumentCode
3501380
Title
The structure and characteristics of polyimide thin films by vapor deposition polymerization method
Author
Kim, Hyeong-Gweon ; Lee, Boong- Joo ; Kim, Young-Bong ; Lee, Eun-Hak ; Kim, Jong-Suk ; Lee, Duck-Chool
Author_Institution
Inha Univ., Inchon, South Korea
Volume
2
fYear
1997
fDate
25 -30 May 1997
Firstpage
606
Abstract
In this work, polyimide thin films were fabricated by VDPM (vapor deposition polymerization method) of dry processes which makes it easy to control the film´s thickness and hard to cause pollution due to volatile solvents. The structural analysis of molecular and electrical properties was tested. From FT-IR, polyimide was changed by curing through the precursor polyamic acid (PAA); 300°C is an apt cured temperature. From electrical measurement, the polyimide has a resistivity of about 3.2×1015 Ω cm at 30°C and the dielectric breakdown is about 4.61 MV/cm. From these experimental results, the application of the polyimide thin films as an insulator in semiconductor devices is suggested
Keywords
Fourier transform spectroscopy; electric breakdown; insulating thin films; polymer films; polymerisation; vapour deposition; 300 degC; FT-IR; VDPM; dielectric breakdown; electrical measurement; film thickness; insulating thin films; polyimide thin films; precursor polyamic acid; structural analysis; vapor deposition polymerization method; Chemical vapor deposition; Curing; Pollution; Polyimides; Polymer films; Solvents; Sputtering; Testing; Thickness control; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-2651-2
Type
conf
DOI
10.1109/ICPADM.1997.616507
Filename
616507
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