IC process compatible anodic electrode structures for unipolar HfOx-based RRAM

Author

Chen, W.S. ; Chen, Y.S. ; Hsu, Y.Y. ; Yang, S.Y. ; Liu, W.H. ; Lee, H.Y. ; Gu, P.Y. ; Tsai, C.H. ; Wang, S.M. ; Chen, P.S. ; Wang, Y.H. ; Chen, F.T. ; Tsai, M.-J.

Author_Institution

Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

HfOx RRAM is a most promising candidate for next generation nonvolatile memory with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have their advocators. Cell area of 4F² and/or 3D stacking for high density applications is the determining factor of preferring unipolar device. High operation power, low endurance and slow speed are most crucial issues. Recently, polarity of RRAM reported to be a strong function of top (anodic) electrode (TE) material. In this work, HfOx-based RRAM is studied by selection of TE stacking structures to find unipolar HfOx-based RRAM device structures with better performance.

Keywords

atomic layer deposition; electrodes; hafnium compounds; integrated circuit interconnections; integrated circuit manufacture; random-access storage; three-dimensional integrated circuits; vapour deposited coatings; HfO_x; IC process compatible anodic electrode structure; RRAM; bipolar switching; nonvolatile memory; top electrode material; unipolar device; Electrodes; Materials; Nickel; Performance evaluation; Stacking; Weibull distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872249

Filename

5872249