Low power ReRAM with Fab-friendly materials through PVD morphology and stoichiometry control

Author

Otani, Yuichi ; Gilmer, David C. ; Park, Hokyung ; Junko, Ono ; Yamaguchi, Nobuo ; Nakagawa, Takashi ; Kirsch, Paul D. ; Jammy, Raj

Author_Institution

Canon ANELVA Corp., Kawasaki, Japan

fYear

2011

fDate

25-27 April 2011

Firstpage

1

Lastpage

2

Abstract

Low power and reliable “Fab-friendly” resistance switching memory devices (ReRAM) are achieved by controlling composition and morphology of simple binary transition-metal oxides (MeOx) and metal-nitride electrodes (Ti-N) through physical vapor deposition (PVD) methods. Adjusting PVD deposition parameters influence crystalline structure, surface morphology, and stoichiometry, which subsequently influence the ReRAM device performance. Using optimized PVD methods results in well behaved ReRAM switching devices with over 10× memory window at 1.2 V operating voltage, reset currents to 50 μA, over 100 K endurance cycling, and excellent retention and disturb characteristics.

Keywords

crystal structure; electrodes; low-power electronics; random-access storage; surface morphology; switching circuits; titanium compounds; vapour deposition; PVD deposition parameters; PVD morphology; TiN; binary transition-metal oxides; crystalline structure; current 50 muA; fab-friendly resistance switching memory devices; low power ReRAM; metal-nitride electrodes; physical vapor deposition methods; stoichiometry control; surface morphology; temperature 100 K; voltage 1.2 V; Electrodes; Films; Metals; Morphology; Nitrogen; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-8493-5

Type

conf

DOI

10.1109/VTSA.2011.5872250

Filename

5872250