DocumentCode :
3501528
Title :
Influence of NiSi on parasitic resistance fluctuation of FinFETs
Author :
Matsukawa, T. ; Liu, Y.X. ; Endo, K. ; Tsukada, J. ; Ishikawa, Y. ; Yamauchi, H. ; O´uchi, S. ; Sakamoto, K. ; Masahara, M.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2011
fDate :
25-27 April 2011
Firstpage :
1
Lastpage :
2
Abstract :
Influence of NiSi S/D incorporation on parasitic resistance (Rpara) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the Rpara reduction, it also causes additional Rpara fluctuation. Through analysis of correlation of Rpara with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n+-Si contact resistance component could cause the Rpara fluctuation.
Keywords :
MOSFET; contact resistance; nickel compounds; FinFET; NiSi; contact resistance component; parasitic resistance fluctuation; Contact resistance; Correlation; FinFETs; Fluctuations; Logic gates; Resistance; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-8493-5
Type :
conf
DOI :
10.1109/VTSA.2011.5872256
Filename :
5872256
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3501528
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