• DocumentCode
    3501528
  • Title

    Influence of NiSi on parasitic resistance fluctuation of FinFETs

  • Author

    Matsukawa, T. ; Liu, Y.X. ; Endo, K. ; Tsukada, J. ; Ishikawa, Y. ; Yamauchi, H. ; O´uchi, S. ; Sakamoto, K. ; Masahara, M.

  • Author_Institution
    Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2011
  • fDate
    25-27 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Influence of NiSi S/D incorporation on parasitic resistance (Rpara) fluctuation of FinFETs was investigated in detail. While the NiSi S/D enhances the on current of the FinFET thanks to the Rpara reduction, it also causes additional Rpara fluctuation. Through analysis of correlation of Rpara with fin thickness and gate-to-NiSi offset fluctuation, it is revealed that NiSi/n+-Si contact resistance component could cause the Rpara fluctuation.
  • Keywords
    MOSFET; contact resistance; nickel compounds; FinFET; NiSi; contact resistance component; parasitic resistance fluctuation; Contact resistance; Correlation; FinFETs; Fluctuations; Logic gates; Resistance; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-8493-5
  • Type

    conf

  • DOI
    10.1109/VTSA.2011.5872256
  • Filename
    5872256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3501528