Mm/sub-mm bolometer with free carriers heating in bipolar semiconductor waveguide

In this paper direct detection bolometers on the base of MCT bipolar narrow-gap semiconductor for mm and sub-mm region is considered. Warm electrons bolometer theoretical model is developed. In this model electromagnetic wave propagates in bipolar semiconductor waveguide with the thickness a₁, the width a₂ and the distance a₃ between the metal contacts, heats electrons and holes, and therefore creates their thermodiffusion flow and, as well as, the electromotive force. The flow causes the carrier excess concentration n_h and p_h. Both the carrier excess concentration and the electromotive force are used to get the bolometer response voltage.